Transistor à effet de champ ayant des propriétés améliorées de capacité parasite et de transconductance.,申请号FR19940000110-传众专利搜索

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发明名称	Transistor à effet de champ ayant des propriétés améliorées de capacité parasite et de transconductance.
摘要
申请公布号	FR2700221(B1)	申请公布日期	1996.01.19
申请号	FR19940000110	申请日期	1994.01.07
申请人	FUJITSU LTD	发明人	HASEGAWA YUUICHI
分类号	H01L29/812;H01L21/285;H01L21/335;H01L21/336;H01L21/338;H01L29/423;H01L29/778;(IPC1-7):H01L29/52;H01L29/784	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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