| 摘要 |
PURPOSE: To provide a method for manufacturing a reliable semiconductor device without damaging a lower semiconductor material and a metal covering layer while an insulation layer on an etching inhibition layer is being etched. CONSTITUTION: A channel region 15 is formed on a semiconductor 10 with a field oxide layer 12 as a mask and a gate insulation layer 16 made of SiO2 is formed. A gate layer 18 made of poly Si and a source/drain (S.D) region 20 are formed on it. The exposed part of the gate insulation layer is eliminated, and an insulation layer 25 that is made of Al nitride or Al oxide is formed by the reactive sputtering method. SiO2 layer 26 is formed on the insulation layer 25 and perhydrofluoric CH plasma etching is made, and SiO2 forms a spacer 26 made of SiN adjacently to the gate layer. The insulation layer 25 protects the S.D region 20 from the exposure to plasma as an etching inhibition material, thus preventing the region 20 from being damaged. Also, a capping layer 38 made of Ti.W or TiN is formed on a metal covering layer 37 in a via hole, and no layer 38 is etched when the insulation layer 39 formed on it is etched.
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