| 摘要 |
<p>A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer (2), n-type ZnSSe layer (3), n-type ZnMgSSe cladding layer (4), n-type ZnSSe waveguide layer (5), active layer (6), p-type ZnSSe waveguide layer (7), p-type ZnMgSSe cladding layer (8), p-type ZnSSe layer (9), p-type ZnSe contact layer (10), p-type ZnSe/ZnTe MQW layer (11) and p-type ZnTe contact layer (12), sequentially stacked on an n-type GaAs substrate (1). A grid-shaped p-side electrode (13) and a Au film (14) covering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode (15) is provided on the back surface of the n-type GaAs substrate. The active layer (6) has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers. <MATH></p> |
