| 摘要 |
A method for fabricating a capacitor of a semiconductor memory device, capable of obtaining a sufficient storage capacitance even when a memory cell area is reduced, thereby improving the integration degree of the semiconductor memory device. The method includes the steps of: forming a planarized insulating oxide film on a semiconductor substrate formed with a transistor having an impurity diffusion region; forming a contact hole by use of a contact hole mask; forming an electrode layer over the insulating oxide film such that the electrode layer is in electrical contact with the impurity diffusion region; forming a sacrificial oxide film pattern having a bird's beak shape on a portion of the electrode layer disposed around the contact hole; etching the electrode layer by use of the sacrificial oxide film pattern as an etch barrier until the insulating oxide film is exposed, thereby forming an electrode layer pattern; wet etching the sacrificial oxide film pattern, thereby exposing an upper surface of the electrode layer pattern; and sequentially forming a dielectric film and a plate electrode over the exposed surface of the electrode layer pattern.
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