| 摘要 |
A circuit and method for detecting and protecting against an overcurrent condition in a power transistor switching device, and particularly an IGBT. The power transistor switching device has main terminals and a control terminal, the main terminal having a normal saturation voltage therebetween during normal conduction of the power transistor device. The circuit includes a driver providing control signals to the control terminal of the power transistor device for switching the power transistor device on and off, a sensing circuit coupled to the power transistor device for sensing the saturation voltage of the power transistor device, and a switching circuit coupled to the control terminal of the power transistor device and responsive to the sensing circuit for removing the control signals from the control terminal in the event the saturation voltage reaches an abnormal level indicating an overcurrent condition in the power transistor device.
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