| 摘要 |
914,260. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Aug. 18, 1959 [Sept. 30, 1958], No. 28189/59. Class 37. A process for the manufacture of a semiconductor device comprises alloying a gold foil to a silicon body to form an electrode, providing at least one face of a molybdenum carrier plate with a gold coating the thickness of which is not more than <SP>1</SP>/ 30 th of the thickness of the gold foil, and alloying the gold-coated face of the Mo plate to the electrode at a temperature between 400‹ and 450‹ C. The Au coating on the Mo plate may be bonded to the plate by flashing at 900‹ C. in an inert atmosphere; it may be applied in several layers, each being independently flashed. Alternatively, as in the transistor shown, the Mo plate 14 is coated with successive layers of Ni 15, Ag 16, and Au 17, each layer being electrolytically deposited and flashed at 800‹ C. Completely coating the Mo plate enables it to be soft soldered to a metallic supporting or cooling body, and protects it when the device is etched in, e.g. a 1 : 1 mixture of hydrofluoric acid and nitric acid. The disc-shaped body 10 of P-type Si has an alloyed annular base electrode 21 of B-doped Au, and emitter and collector electrodes 18, 13, made by alloying Sb-doped Au foils to the body. Finally, the collector electrode 13 is alloyed with the Au layer 17 on the Mo plate by heating to between 400‹ and 450‹ C. |
