| 摘要 |
<p>PURPOSE:To locally heat an etching solution in the vicinity of a short-circuit part, accelerate etching, and selectively eliminate the short-circuit part defect, by applying a current to the short-circuit part, after etching solution of wiring material is brought into contact with the short-circuit defect part generated at the point of intersection between multilayered wirings formed via an insulating layer and in the gap between adjacent wirings. CONSTITUTION:On a substrate 4 composed of a cleaned blue plate glass, Cu and Au are deposited to have the respective specified thicknesses by a vacuum evaporation method, and then worked into a desired pattern by a photoetching method. Thus a row direction wiring 1 is formed. An interlayer insulating film 5 composed of SiO2 is deposited by an RF sputtering method, and worked into a desired pattern by a photoetching method. By a lift-off method, a Ti film and an Au film having the respective specified thicknesses are formed by a vacuum evaporation method, and an unnecessary film is eliminated. Thus a column direction wiring 2 is formed. A short-circuit part 6 between the wirings is detected, and thereon etching solution 7 is dripped. The short-circuit part 6 is etched and eliminated by applying a current across the wirings having short-circuit defect part 6.</p> |
