| 摘要 |
PURPOSE:To prevent generation of cracks to improve reliability by using a Cu-base alloy showing the hardness under a high temperature which is only a half of that under the room temperature and also showing a very higher softening temperature for a metallic heat radiating plate of the device where a semiconductor element is mounted on an insulating substrate, metallic heat radiating plate and stress alleviating material on a metallic supporting plate of a power control element. CONSTITUTION:An IGBT module is formed by joining eight (8) Mo blocks 4 consisting of Cu-Cr-Zr heat radiating plate 3 in the thickness of 4mm and a heat stress alleviating material with Sn solder including Au of 20%. Eight semiconductor blocks 4 and electrodes of insulating layer through AlO are joined on the blocks 4 and Cu-Cr-Zr heat radiating plate 3 respectively with Sn-5%Sb solder. Moreover, the AlO ceramics of the insulated substrate 2 and a pure Cu supporting plate 1 are joined with Sn-40%Pb solder and thereafter a lead wire 13 is soldered. After an epoxy case 12 is placed thereon, the inside is filled with silicon gel 9. The metallic supporting plate 1 is made of a Cu group alloy which shows the hardness under a high temperature equal to a half of the hardness under the room temperature and also shows the softening temperature of 350 deg.C or more. |
