| 摘要 |
PURPOSE:To provide a method for manufacturing micro-patterns whereby a good mask pattern can be transferred and provided a method for manufacturing semiconductor devices, by so determining an inorganic film having both an antireflection effect and the quality of an inorganic mask that the good and stable mask pattern can be formed without any increase of the number of its manufacturing processes. CONSTITUTION:On a substrate 18, an antireflection film 20 made of an inorganic film is formed, and on this antireflection film 20 a resist film 24 is formed, and further, this resist film 24 is exposed to i-line or light having a shorter wavelength than i-line. Subsequently, a mask pattern 26 is transferred on the resist film 24, and by the use of the resist film 24 as a mask whereon the mask pattern 26 is transferred, the antireflection film 20 is etched, and thereby, the mask pattern 26 is transferred to the antireflection film 20. Then, by the use of the antireflection film 20 as a mask whereon the mask pattern 26 is transferred, the substrate 18 whereon a metallic wiring layer is formed is etched, and the mask pattern 26 is transferred to the substrate 18. |
