发明名称 |
Process for manufacturing SiC-based ceramic precursors |
摘要 |
A process for manufacturing SiC-based ceramic precursors by curing a polycarbosilane shaped body while it is in contact with vapor of at least one hydrocarbon selected from the group consisting of halogenated hydrocarbons and unsaturated hydrocarbons of ethylene series and acetylene series. This process can cure polycarbosilane shaped bodies without introducing oxygen thereinto and requires no special apparatuses. The obtained precursor is suited for synthesizing SiC-based ceramics efficiently without deteriorating characteristics thereof, particularly excellent in high-temperature strength.
|
申请公布号 |
US5435952(A) |
申请公布日期 |
1995.07.25 |
申请号 |
US19940184346 |
申请日期 |
1994.01.19 |
申请人 |
THE FOUNDATION: THE RESEARCH INSTITUTE FOR SPECIAL INORGANIC MATERIALS |
发明人 |
HASEGAWA, YOSHIO |
分类号 |
C01B31/36;C04B35/571;C08G77/48;C08G77/60;D01F9/10;(IPC1-7):B29C35/04 |
主分类号 |
C01B31/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|