| 摘要 |
PURPOSE:To improve stability, uniformity, reproductivity and accuracy by forming a perovskite-type composite compound film not containing Zr on a substrate and then depositing a main deposition layer. CONSTITUTION:Sputter targets 2, 3 and 4 consisting of an oxide ferroelectric material sintered in a sputter chamber 1 are arranged at asymmetric positions on a same circumference. A substrate 5 radially arranged on a holder 6 is passed through the targets 2-4 and, simultaneously, the substrate 5 is heated to <=450 deg.C by heat from a light source 7. Then, ion beam generated in a bucket type ion source 8 is irradiated into the target 2 in an atmosphere of <=10<-3> torr to form an initial stage layer having 50-300 Angstrom and not containing Zr at a deposition rate of >=0.5Angstrom /s. Then, the substrate 5 is heated to >=500 deg.C and ion beam generated by the light source 8 is irradiated into targets 3 and 4 in an atmosphere of >=10 Torr to form a perovskite-type composite compound film of ABO3 (A is Pb, Ba, Sr or La; B is Ti or Zr) on the substrate 5. |
