| 摘要 |
The damage of a poly gate layer and a gate oxide layer of MOS device is prevented by suppressing transmission of high energy, high density ion through poly-gate layer by using residual photo-resist. The method includes the steps of; (A) forming a poly-gate layer by a first photomasking process; (B) etching a poly-silicon layer (4) and UV processing the residual photo-resist; (C) spraying photoresist (6) to form a source and drain region; (D) masking a second photo-mask; (E) baking the device about 30 minutes with temperature of 130 degree; (F) injecting ion on a source and a drain region; and (G) removing a residual photo-resist (6).
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