| 摘要 |
PURPOSE: To provide a quantum multi-function transistor of a simple structure and a method for manufacturing the same. CONSTITUTION: A quantum multi-function transistor includes a plurality of conductive layers 25, 35 of a semiconductor material, and a tunnel barrier layer 30 narrowly held between the conductive layers. Each of the conductive layers is formed to be very thin so as to form an individual energy level, and the material of the conductive layers is selected so that the individual energy levels in the layers are not matched across the tunnel barrier layer in an equilibrium state. A gate 45 is coupled with part 25', 35' on one side of the conductive layers, and in response to the voltage applied thereto, the individual energy levels in the conductive layers are matched via the tunnel barrier layer 30. Thus, a current of a large number of carriers flows through the transistor. When the voltage applied to the gate is increased, a current of a small number of carriers flows through the transistor. |
