| 摘要 |
A high speed soft recovery diode having a large breakdown voltage is disclosed. Anode P layers (3) are selectively formed in a top portion of an N- body (2). A P- layer (4a) is disposed in the top portion of the N- body (2) so as to be spacewise complementary to the anode P layers (3). In the N- body (2), P regions (5) are selectively formed below the P- layer (4a). On the N- body (2), an anode electrode (6) is disposed in contact with both the P- layer (4a) and the anode P layers (3). A cathode electrode (7) is disposed under the N- body (2) through a cathode layer (1). When the diode is reverse-biased, a depletion layer does not have a sharply curved configuration due to the P regions (5). Hence, concentration of electric field is avoided and a breakdown voltage would not deteriorate. During forward-bias state of the diode, injection of excessive holes from the anode P layers (3) into the N- body (2) is prevented, thereby reducing a recovery current.
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