发明名称 METHOD OF MEASURING CHARACTERISTICS OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable characteristics measurement to be carried out in a short period of time and with high precision, by changing the value of an input voltage by a given value larger than a desired precision and then changing it by a given value corresponding to the precision so as to detect the corresponding output signal from an element to be measured. CONSTITUTION:A program power supply circuit 28 receives information from an arithmetic unit 21, and constantly supplies a voltage to a drain and a source of an element to be measured 31 through a test head 30. The program power supply circuit 28 further outputs voltages sequentially increased from 0V by 0.1V based on the information from the arithmetic unit 21, and these voltages are supplied to a gate of the element to be measured 31. A drain current IDS corresponding to each voltage is detected by a current measurement circuit 27. VG is sequentially increased by a step corresponding to the precision until the IDS reaches a predetermined value. The gate input voltage at that time is determined as a threshold voltage.
申请公布号 JPS60136325(A) 申请公布日期 1985.07.19
申请号 JP19830244106 申请日期 1983.12.26
申请人 TOSHIBA KK 发明人 NAKAMA MASUMI
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
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