| 摘要 |
<p>PURPOSE:To provide a semiconductor light emitting device which is high in efficiency of taking out light and excellent in productivity. CONSTITUTION:A semiconductor light emitting device is composed of a P- GaAlAs clad layer 2, an N-GaAlAs clad layer 4, a P-GaAlAs active layer 3 interposed between the clad layers 2 and 4, a lower electrode 5, an upper electrode 10, and a light emitting surface 9, wherein the lower electrode 5 is formed into a lattice shape, the size of each grid 7 of the lower electrode 5 is set smaller than a lateral diffusion distance of a current in the N-GaAlAs clad layer 4, and an SiO2 film is formed on the grids.</p> |
