| 摘要 |
PURPOSE:To prevent the occurrence of cracks caused by a silicon nitride film which works as a mask at side wall etching and the increase of inter-wiring capacity, relating to a multiple cylinder type stack capacitor. CONSTITUTION:A silicon nitride film for mask directly under node electrodes 11a and 13a is abolished, and a layer insulation film 9 works as a mask at etching of polycrystal silicons 11a and 13a. After the node electrodes are formed, a photoresist film 15 is deposited on the surface of the layer insulation film 9, so that a mesa-profiled supporting body 12a is exposed, and then it is removed by wet-etching, etc. Then, after the photoresist film 15 is removed, a capacity insulation film 16 and a polycrystal silicon film 17 are deposited, and they are etching-processed for forming a cell plate electrode. |
