发明名称 |
Process for producing closely spaced conductive lines for integrated circuits |
摘要 |
A process of fabricating a non-volatile read only memory device (ROM) wherein the conductive word lines have desirable very narrow widths and are closely spaced. The invention provides a process for forming word lines with a smaller width and line pitch than is possible with conventional processes. A first set of word lines is formed. Next, a second set of word lines is formed in between the first word lines using oxide spacers to define the second word lines.
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申请公布号 |
US5378646(A) |
申请公布日期 |
1995.01.03 |
申请号 |
US19940271756 |
申请日期 |
1994.07.07 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
HUANG, HENG-SHENG;CHEN, KUN-LUH;WU, WOOD |
分类号 |
H01L21/8246;H01L27/112;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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