| 发明名称 |
Manufacturing method of semiconductor-on-insulator region structures |
| 摘要 |
A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
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| 申请公布号 |
US2008087959(A1) |
申请公布日期 |
2008.04.17 |
| 申请号 |
US20070713553 |
申请日期 |
2007.03.02 |
| 申请人 |
STMICROELECTRONICS S.A.;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
MONFRAY STEPHANE;HALIMAOUI AOMAR;CORONEL PHILIPPE;LENOBLE DAMIEN;FENOUILLET-BERANGER CLAIRE |
| 分类号 |
H01L29/786;H01L21/336;H01L21/762 |
主分类号 |
H01L29/786 |
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