| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent a pattern defect due to etching remnants and being generated during a gate patterning by forming a gate pattern in a recess through an etch-back process and CMP. A recess is formed on a substrate(51). A gate dielectric(54) is formed in the recess. A gate conduction layer(55) is gap-filled at a part in the recess on an upper portion of the gate dielectric. A gate metal layer(57) is gap-filled so as not to be protruded to the outside of the recess on an upper portion of the gate conduction layer. A gate spacer(56) is disposed between a sidewall surface of the gate metal layer and a sidewall surface of the recess. A source and drain region(59) is formed on an external substrate of the recess. A gate hard mask layer(58) is formed on an upper portion of the gate metal layer. The gate hard mask layer is gap-filled so as not to be protruded to the outside of the recess.</p> |
