| 摘要 |
PURPOSE:To provide a large-capacity semiconductor memory which has an excellent soft error resistance by preventing the increase of the size of a capacitor and the number of manufacturing processes. CONSTITUTION:A stacked capacitor CP is connected to a source of a transfer transistor Tr. The stacked capacitor CP is constituted of a first and a second capacitor which are connected parallelly. The first capacitor is constituted of an N-type storage node 20, a capacitor insulating film 21, and a sell plate 22 and the second one is constituted of the storage node 20 and a PN junction between the storage node 20 and P-type polysilicon 19 which is being brought into contact with the storage node 20. |
