发明名称 THIN FILM TRANSISTOR ARRAY
摘要 <p>PURPOSE:To decrease the OFF current of a TFT in a liquid crystal panel by restraining the light reflected on an opposing substrate from impinging on an a-Si film. CONSTITUTION:In a thin film transistor 3 comprising a gate electrode 5, an a-Si film 6, a drain electrode 7, and a source electrode 8, the source electrode is elongated to form a light shielding part 8a around the a-Si film 6. Since the quantity of backlight transmitting through the TFT substrate is decreased, the quantity of reflected light impinging on the a-Si film 6 is decreased thus decreasing the OFF current of the TFT.</p>
申请公布号 JPH06310723(A) 申请公布日期 1994.11.04
申请号 JP19930119024 申请日期 1993.04.22
申请人 NEC CORP 发明人 SUKEGAWA OSAMU;IHARA HIROSHI
分类号 G02F1/136;G02F1/1362;G02F1/1368;H01L29/78;H01L29/786;(IPC1-7):H01L29/784 主分类号 G02F1/136
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