发明名称 Implantation method having improved material purity
摘要 A method of manufacturing a device, preferably a semiconductor device, whereby a mask (3) with an opening (4) extending down to a bare body (1) is provided on a surface (2) of this body (1), after which a substance (5) is implanted into the body (1) through the opening (4), upon which the mask (3) is removed. The mask (3) is provided by depositing a first and a second layer (6, 7, respectively) on the surface (2), and these layers are provided with the opening (4), while the first layer (6) can be selectively removed relative to the material of the body (1), and the second layer (7) is of the same material as the body (1). Since the same material is used for the second layer (7) as for the body (1), the body (1) is not polluted with material from the mask (3) in the opening (4) during implantation.
申请公布号 US5354697(A) 申请公布日期 1994.10.11
申请号 US19920949277 申请日期 1992.09.22
申请人 U.S. PHILIPS CORPORATION 发明人 OOSTRA, DOEKE J.;OUWERLING, GERARDUS J. L.;OTTENHEIM, JOZEF J. M.;VAN ROOIJ-MULDER, JOHANNA M. L.
分类号 H01L21/265;H01L21/266;H01L21/28;H01L21/335;H01L21/74;(IPC1-7):H01L21/265 主分类号 H01L21/265
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