| 摘要 |
PURPOSE: To obtain a three-dimension semiconductor device structure with a high mounting density, by using deposition techniques to apply to it the wirings for executing the various functions of a VLSI circuit with a high mounting densitiy. CONSTITUTION: On a flat substrate 10, a plurality of three-dimension FET devices are formed. From the left to the right, there are provided a surface layer 11 of polysilicon wirings, two vertical N-channel transistors 12, 13, two horizontal N-channel transistors 14, 15, and tow p-silicon layers 18, 19 suitable to using for polysilicon diffusion wirings. To form the channel between the source and the drain of each of the FETs, each of the p-layers 18, 19 is sandwiched between the portions of each of polysilicon gates 21, 22. As a result, a new three-dimension semiconductor structure for improving remarkably the mounting density of a VLSI circuit can be obtained. |
