发明名称 |
PHOTODIODE |
摘要 |
In this invention, there is disclosed a new photodiode which comprises a semimetal/semiconductor junction. Distortion of the bands associated with this type of junction result in current flow when an electron hole pair is formed by, for example, a photon impinging upon the junction. The photodiode operates in the photovoltaic mode. However, rather than relying on impurity doping to fabricate a p-n junction, the semimetallic nature of HgTe and its large conduction band offsets with Hg1-xCdx Te are used to create a rectifying Schottky like structure.
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申请公布号 |
CA2018320(C) |
申请公布日期 |
1994.07.19 |
申请号 |
CA19902018320 |
申请日期 |
1990.06.05 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
AUSTIN, RICHARD F.;FELDMAN, ROBERT D.;SULHOFF, JAMES W.;ZYSKIND, JOHN L. |
分类号 |
H01L31/10;H01L31/0296;H01L31/101;H01L31/108;(IPC1-7):H01L31/026 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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