发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
The device consists of normal memory cell arrays which have the first data state and the second data state, redundant memory cell arrays for replacing the normal memory cell arrays being out of order, the first control signal for replacing inferior normal cell arrays having the first state, the second control signal for replacing inferior normal cell arrays having the second state, input and output control circuit for controlling states of data interacted from replaced memory cell arrays. |
申请公布号 |
KR940006079(B1) |
申请公布日期 |
1994.07.06 |
申请号 |
KR19910009839 |
申请日期 |
1991.06.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JON - HYONG;HO, BU - YONG |
分类号 |
G11C29/00;(IPC1-7):G11C11/40 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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