| 摘要 |
The diodes are formed on substrates with horizontal separation regions. There are two inner p+ doped island separated by a high resistance layer of p- and and outer ring of n+ material, all on an n- doped substrate, for each diode.The diodes can be represented by a limiting region (Z11,Z12) with a high voltage limiter (D1,D2). When the voltage on a first terminal (1) is greater than that on a second terminal (2), D1 passes current and D2 blocks it, passing current to the optical coupler diode (30) with Z12 providing the second terminal path. When the breakdown voltage is passed, the second element with Z12 (L2) limits the voltage preventing it from rising further. Thus two directional voltage limiting is achieved.
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