Method for forming a patterned resist

摘要

After a resist layer is formed on a substrate, a predetermined region of resist layer is exposed. A silylated layer is formed in the exposed region of resist layer. After the silylation, a part but not all of the unexposed portion of the resist layer is etched to expose a nonsilylated side portion of the exposed region. The non-silylated side portion of the exposed region uncovered by etching is then silylated. The remainder of the unexposed region is removed, so that a resist pattern is finally obtained. According to the method, a fine resist pattern can be formed without side etch.