THIN-FILM TRANSISTOR ARRAY

摘要

PURPOSE:To make the manufacturing process of a thin-film transistor array easier and to easily increase the area of the array so as to eliminate the formation of a level difference by burying a metallic material used for forming the gate wiring and gate electrode of the transistor in an insulating substrate. CONSTITUTION:A gate insulating film 3 is formed on a glass substrate 1 and a picture element electrode 4 and amorphous silicon layer 5 are formed on parts of the film 3. On the layer 5, an n-type amorphous silicon layer 6 is formed for taking ohmic contact between the layer 5 and a drain electrode 8. Since the metallic material used for forming metallic wiring 2 is specially buried in the substrate 1, the cross-sectional area of the wiring 2 can be increased. In addition, a low-resistance gate which is free from propagation delay can be formed, because the internal parasitic resistance of the metallic material does not affect the wiring.