| 摘要 |
A new method of removing particles from the surface of a wafer is described. The key to the method is a room temperature ammonium hydroxide-hydrogen peroxide solution. The wafer is immersed in hydrofluoric acid, then, while the wafer is still wet, it is either immersed in an ammonium hydroxide-hydrogen peroxide solution or the ammonium hydroxide-hydrogen peroxide solution is sprayed onto the wafer. Since the cleaning solution is at room temperature, the process is safer. The bath life is prolonged because the solution does not break down as it would at higher temperatures.
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