| 摘要 |
PURPOSE:To obtain a semiconductor device incorporating a temperature detecting element exhibiting such characteristics as reflecting the element temperature accurately by forming the temperature detecting element on the surface of a semiconductor element through a dielectric film. CONSTITUTION:A dielectric film of 0.6-1.0mum thick is deposited on a gate oxide 7 and a poly-Si layer of about 1mum thick is then deposited thereon and subjected to ion implantation to form a p<+> layer 14 and an n<+> layer 15 constituting a temperature detecting diode. An anode electrode 11 to be connected with terminal A and a cathode electrode 12 to be connected with terminal C are provided on the surfaces of the layers 14, 15. A signal dependent on forward or reverse characteristics of diode is obtained from the electrode 11 or 12 and inputted through terminal A or C to a gate voltage control circuit thus protecting a gate isolation bipolar transistor against overheat. Since temperature of semiconductor element can be detected accurately without forming any parasitic element, safety operation region is widened in this semiconductor device. |
