| 摘要 |
PURPOSE:To fabricate a wideband ultrahigh rate optical modulator and a photodetector at high yield by employing a high resistance substrate embedded in a PIN structure optical waveguide and a high resistance layer. CONSTITUTION:An SiO2 mask is patterned through photolithography and wet etching on a high resistance InP substrate 101 and an n<+>-InP clad layer 102 is crystal grown selectively through MOVPE. Similarly, a high resistance InP block layer 106 is crystal grown selectively thus forming a pair of high resistance InP block layers 106. Similarly, an i-GaAsP light absorption layer 103, a P-InP clad layer 104, and a P-InGaAs cap layer 105, constituting a mesa stripe, are sequentially crystal grown between the pair of high resistance InP block layers 106. Finally, an n-side electrode 109 is formed on the n-InP clad layer 2 and a p-side electrode 108 is formed on the mesa stripe, thus lowering capacitance having no relation with actual operation as low as possible. |
