| 摘要 |
PURPOSE:To separate a sapphire board into chip states without impairing crystallizability of gallium nitride series semiconductor laminated on a board by cutting the board by dicing or scribing. CONSTITUTION:A protective layer is first provided on a p-type layer 3 of an uppermost layer of a wafer laminated on a sapphire board 1. The layer 3 is etched up to an n-type layer 2. After the etching is finished, the protective layer is removed. Further, the layer 2 is etched or diced to the board 1 except a space provided with an n-type electrode on a surface of the layer 2. Then, the board 1 is separated by dicing or scribing. The drawing shows a state in which electrodes 6 are formed on the separated layers 2, 3 of a gallium nitride series compound semiconductor element. Thus, a boundary between the layers 2 and 3, i.e., a p-n junction surface can be separated without stress. |
