发明名称 FIELD EMISSION CATHODE DEVICE
摘要 <p>PURPOSE:To conveniently insulate a cathode layer when a semiconductor substrate is employed in a field emission cathode device. CONSTITUTION:In a field emission cathode device in which emitter tips 18 each connected to a cathode layer are disposed in holes provided in an insulating layer 20 and a gate electrode layer 22 which are laid one over the other, the cathode layer 16 is provided on the surface of a semiconductor substrate 14 and is formed of a semiconductor of different conductivity from that of the surface of the semiconductor substrate 14.</p>
申请公布号 JPH05314892(A) 申请公布日期 1993.11.26
申请号 JP19920112765 申请日期 1992.05.01
申请人 FUJITSU LTD 发明人 BETSUI KEIICHI;TOYODA OSAMU;FUKUDA SHINYA
分类号 H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J1/30 主分类号 H01J9/02
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