发明名称 |
FIELD EMISSION CATHODE DEVICE |
摘要 |
<p>PURPOSE:To conveniently insulate a cathode layer when a semiconductor substrate is employed in a field emission cathode device. CONSTITUTION:In a field emission cathode device in which emitter tips 18 each connected to a cathode layer are disposed in holes provided in an insulating layer 20 and a gate electrode layer 22 which are laid one over the other, the cathode layer 16 is provided on the surface of a semiconductor substrate 14 and is formed of a semiconductor of different conductivity from that of the surface of the semiconductor substrate 14.</p> |
申请公布号 |
JPH05314892(A) |
申请公布日期 |
1993.11.26 |
申请号 |
JP19920112765 |
申请日期 |
1992.05.01 |
申请人 |
FUJITSU LTD |
发明人 |
BETSUI KEIICHI;TOYODA OSAMU;FUKUDA SHINYA |
分类号 |
H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J1/30 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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