发明名称 |
Method of forming a self-aligned contact utilizing a polysilicon layer |
摘要 |
A method of forming a contact region having an insulating layer which is etch protected, which includes sequentially depositing a gate oxide layer 2, a first conducting layer 3 for gate electrode, a first insulating layer 4 and a second conducting layer 5 on a silicon substrate 1. A portion of the second conducting layer 5 is etched to form an etch protective layer 5A. Portions of the etch protective layer 5A, the first insulating layer 4 and the first conducting layer 3 are sequentially etched to form separated gate electrodes 3a and 3b and separated etch protective layers 5a and 5b on the gate electrodes 3a and 3b, respectively and to expose a portion of the gate oxide layer 2 to define a source region 1A. A second insulating layer 6 is deposited on the entire surface of the resulting structure. The second insulating layer 6 is etched to form a spacer 6a on each of the side walls of the gate electrodes 3a and 3b and on the first insulating layer 4 and to expose the source region 1A. A third insulating layer 7 is deposited on the entire surface of the resulting structure. A contact region 10 is formed by selectively removing the third insulating layer 7 and the gate oxide layer 2 on the source region 1A and portions of the third insulating layer 7 on the etch protective layers 5a and 5b to form a contact region having an etch protected insulating layer.
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申请公布号 |
US5264391(A) |
申请公布日期 |
1993.11.23 |
申请号 |
US19920842549 |
申请日期 |
1992.02.27 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
SON, GON;LEE, HEON C.;YOON, SOO S.;LEE, DONG D.;PARK, HAE S.;KIM, SEA C. |
分类号 |
H01L21/60;(IPC1-7):H01L21/441 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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