发明名称 |
DRAM cell having tunnel shaped structure and formation process thereof |
摘要 |
A DRAM cell having a tunnel-shaped structure (in the form of buried bit line structure) and a formation process therefore are disclosed. A storage poly and a local connecting layer are interconnected in such a manner as to form a tunnel-shaped portion, and a bit line passes through the tunnel formed by the combination of the local connecting layer and the storage poly. A flattening insulating layer, a bit line capping-oxide-layer and a spacer are filled between the storage poly, the local connecting layer and the bit line. The storage poly is contacted through the local connecting layer to a first semiconductor region, while the bit line is directly contacted to a second semiconductor region.
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申请公布号 |
US5262663(A) |
申请公布日期 |
1993.11.16 |
申请号 |
US19900635731 |
申请日期 |
1990.12.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RHO, BYUNGBYUG;JIN, DAEJEI |
分类号 |
H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L27/01;H01L27/13;H01L29/78 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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