| 摘要 |
PURPOSE:To enable highly precise pattern transfer on the absorber (W, W-Ti) of an X-ray mask. CONSTITUTION:Tungsten or alloy of tungsten and titanium is used as X-ray absorber 3, and a thin film 9 of titanium nitride is formed on the lower layer or the upper layer of the X-ray absorber, so that stable fine work is enabled by using large etching selectivity of titanium nitride and tungsten. |
