| 摘要 |
PURPOSE:To simplify the process for forming the element and to decrease switching currents by integrating optical amplifiers and providing the P-N junctions formed by the growth of the same crystals in an optical amplifying part and an optical switching part. CONSTITUTION:The element constituted by integrating the optical amplifiers to carrier implantation type optical switches having a single bridge crossed structure is constituted of an optical waveguide 1, an optical switching current implantation part 2 and the optical amplifying part 3. The angle of an X branch is specified to be 10 deg. and the angle of a Y branch to be 5 deg.. This element is used as a unit cell constituting an optical switch array. The optical switching part is formed by growing the optical waveguide layer 22, a barrier layer 23, an optical amplifying part 24, a clad layer 25 and a gap layer 26 on a substrate 21. Since the P-N junction is formed by such crystal growth, the control of the joining position with sufficient accuracy is possible. An oxide film is deposited by evaporation over the entire surface to form an oxide mask by using photolithography only in the parts of the optical amplifying part 3 and the current implantation part 2 and the upper four layers exclusive of the optical amplifying part are successively removed by a selective etching method. |
