| 摘要 |
The trench capacitor having at least 64M grade is mfd. by (a) selectively etching a capacitor-forming region of the silicon substrate (1) to form a first trench, (b) forming a first insulating film (3) on the side surface of the trench, (c) etching the substrate in the first trench region to form a second trench, (d) forming a second insulating film (4) on the whole surface, (e) selectively leaving the film (4), (f) removing the film (3), (g) etching the substrate to form a third trench, and (h) removing the second insulating film, and forming a dielectric film (5) and a plate electrode (6) on the whole surface.
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