发明名称 |
Method of manufacturing semiconductor device including interlaying insulating film |
摘要 |
The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350 DEG C.- 450 DEG C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.
|
申请公布号 |
US5250468(A) |
申请公布日期 |
1993.10.05 |
申请号 |
US19920857141 |
申请日期 |
1992.03.25 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUURA, MASAZUMI;KOTANI, HIDEO;FUJII, ATSUHIRO;NAGAO, SHIGEO;GENJO, HIDEKI |
分类号 |
H01L21/02;H01L21/316;H01L21/768;(IPC1-7):H01L21/441 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|