MOS controlled thyristor - has DMOS cells between MCT cells for MOS controlled short circuits, which do not function as emitters when component is in stationary, conducting state

摘要

DMOS cells (D) are arranged between the MCT cells. Each DMOS cell has a non-emitting firm channel area (9) of a second conductivity type which extends from the first surface (H1) into the second base layer (10). The first channel area has a first cathode short-circuit area (6) of a first conductivity type which is contacted by the cathode contact (2). A second MOS structure on the cathode side of each DMOS-cell forms a switchable short circuit between the second base layer and the first cathode short circuit area. ADVANTAGE - Improved switch-off characteristics.