| 摘要 |
<p>PURPOSE:To provide a thin-film transistor with little limitation in use and wide application and a liquid-crystal drive circuit using the transistor the thin- film transistor switchable in operating polarity and the liquid-crystal drive circuit using the transistor. CONSTITUTION:Almost in the central part of a polysilicon layer 20, a main gate electrode 21 is formed via insulating layer 22. Further, a sub-gate electrode 23a is formed via insulating layers 22, 24 between the source electrode 16 of the polysilicon layer 20 and the main gate electrode 21 and a sub-gate electrode 23b is formed via the insulating layers 22, 24 between a drain electrode 17 and the main gate electrode 21.</p> |
