发明名称 DATA OUTPUT BUFFER CIRCUIT WITH PRECHARGED BOOTSTRAP CIRCUIT
摘要 A data output buffer circuit includes a pair of data lines respectively applied with a noninverted data signal and an inverted data signal and an output gate circuit for gating the noninverted and inverted data signals in response to an output enable signal. A pull-up/pull-down NMOS transistor pair is connected in series between a first supply voltage and a ground voltage. A supply voltage converter circuit generates a constant second supply voltage so long as said first supply voltage is above a predetermined minimum level. A bootstrap circuit is precharged by the second supply voltage for driving the pull-up NMOS transistor with a boosted voltage level when the non-inverted data signal is a logic "HIGH" state. The bootstrap circuit includes a first NMOS transistor, a main capacitor, a secondary capacitor, second and third NMOS transistors to precharge the secondary capacitor, an overcurrent limit circuit for limiting overcurrent into the secondary capacitor, a first CMOS inverter for transferring the boosted voltage from the main capacitor to a gate electrode of the pull-up transistor during the logic "HIGH" state, and for transferring the ground voltage during a logic "LOW" state, and a second CMOS inverter for transferring the second supply voltage to a second terminal of the main capacitor during the logic "HIGH" state, and for transferring the ground voltage thereto during the logic "LOW" state.
申请公布号 US5241502(A) 申请公布日期 1993.08.31
申请号 US19910643285 申请日期 1991.01.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JANG-KYU;JEONG, SEONG-WOOK
分类号 G11C11/412;G11C5/14;G11C7/10;G11C11/409;H03K17/06;H03K19/00;H03K19/017;H03K19/0175;H03K19/094 主分类号 G11C11/412
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