| 摘要 |
PURPOSE:To form an a-Si:H film having a wide area, high uniformity in a surface and excellent film characteristics by heating material gas from a plurality of gas diffusers opened at a side of a gas inlet tube opposed at its side to a substrate and supplying it to a glow discharger. CONSTITUTION:Material gas 6 is introduced into a gas inlet tube 8 via a gas inlet 81, heated by an infrared ray heater having a quartz tube 71 and a resistance wire 72, and supplied to a glow discharge region from a plurality of gas diffusers 82. The tube 8 is formed of heat resistant porcelain of a low thermal conductivity material to prevent radial thermal diffusion from the heater and to raise uniformity of the surface of the film by the diffusers 82 at the side opposed to a film forming substrate 5. Since the resistor 72 of the heater is sealed in the tube 71, it is not exposed to the gas, and a life of the heater can be held long. Thus, an a-Si:H film can be formed as a photoelectric conversion active layer without enhancing the temperature of the substrate. |
