发明名称 DIRECT BONDING METHOD
摘要 PURPOSE:To prevent the decrease in the bonding strength and the increase in the thermal resistance of a junction by forming one of the electrodes to be connected and connecting electrode of gold or silver and the other of tin and applying an impact load after heating. CONSTITUTION:A metal 21 to become a connecting electrode is formed on a submount 14 via a metallized layer. A tin electrode 23 is formed with the primary layer of a cathode electrode 11 to become an electrode to be connected on the lower surface of a chip 1 as a gold layer 22. The submount 14 is placed on a heat column 18. A heater 19 is heated. While positioning the chip 1 on the submount 14, the chip 1 is pressed fixedly. In this manner, the gold of the submount 14 and the tin of the chip 1 becomes eutectic crystal alloy 24 of the gold and the tin, and the tin oxidized film having low thermal conductivity does not remain. Accordingly, the thermal resistance becomes small, and high quality and reliability can be obtained.
申请公布号 JPS57106139(A) 申请公布日期 1982.07.01
申请号 JP19800182009 申请日期 1980.12.24
申请人 HITACHI SEISAKUSHO KK 发明人 KOBAYASHI MASAMICHI
分类号 H01L21/52;H01L21/60;H01L33/40;H01L33/62;H01L33/64 主分类号 H01L21/52
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