| 摘要 |
PURPOSE:To realize the high integrity of a multiport SRAM having a read-only port by reducing the number of elements, to avoid the destruction of the data of the SRAM when the data is read and increase a reading speed by reducing the amplitude of a signal to drive the word line of the SRAM. CONSTITUTION:N-MOS's 22 and 23 are provided as transistors for reading out the data of a flip-flop 21 to read-only bit lines RBL and RBL and a read- only word line RWL is driven so as to have a voltage when the read-only word line RWL is selected lower than the voltage when the word line RWL is not selected. |
