DUMMY WORD LINE BOOT STRAP CIRCUIT

摘要

The method for increasing initial sense margin by bootstrapping dummy word line voltage to the level of dummy cell word line voltage comprises: NAND gate (NAND 11) for decoding a pre-charge signal (RP1) and address signals (AX1-AX11); N-MOS transistor (MN12) for first voltage bootstrapping to the Vcc level; NOR gate (NOR11) gated with NAND11 output and a boot strap signal (RDSA); and boot strap condensor (C11) for second voltage bootstrapping to the level Vcc plus VT to supply to the dummy cells.