发明名称 Power transistor monolithic integrated structure
摘要 A monolithic integrated power transistor chip includes a plurality of transistor cells arranged in two opposite and mutually spaced rows. Each cell has emitter- and collector connection spots arranged side-by-side and connected to corresponding branch conductors directed by rows of connection points extending along opposite edges on the upper surface of the chip.
申请公布号 US5210439(A) 申请公布日期 1993.05.11
申请号 US19910728011 申请日期 1991.07.05
申请人 ROBERT BOSCH GMBH 发明人 CONZELMANN, GERHARD;OLBRICH, LUDGER;FIEDLER, GERHARD
分类号 H01L23/52;H01L27/02;H01L29/73 主分类号 H01L23/52
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