发明名称 |
Power transistor monolithic integrated structure |
摘要 |
A monolithic integrated power transistor chip includes a plurality of transistor cells arranged in two opposite and mutually spaced rows. Each cell has emitter- and collector connection spots arranged side-by-side and connected to corresponding branch conductors directed by rows of connection points extending along opposite edges on the upper surface of the chip.
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申请公布号 |
US5210439(A) |
申请公布日期 |
1993.05.11 |
申请号 |
US19910728011 |
申请日期 |
1991.07.05 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
CONZELMANN, GERHARD;OLBRICH, LUDGER;FIEDLER, GERHARD |
分类号 |
H01L23/52;H01L27/02;H01L29/73 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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