Compound semiconductor device and production method therefor.

摘要

A compound semiconductor device includes a plurality of compound semiconductor epitaxially grown layers including an InGaAs layer as the uppermost layer, disposed on a semi-insulating compound semiconductor substrate; a recess groove penetrating through prescribed layers of the compound semiconductor layers at least including the InGaAs layer; insulating side walls disposed on the side surfaces of the recess groove, whose upper end parts extend outside the recess groove; a gate electrode deposited on the bottom of the recess groove and the internal surfaces of the insulating side walls; and source and drain electrodes deposited on the InGaAs layer at opposite sides of the recess groove self-alignedly with the upper ends of the insulating side walls. <IMAGE>