| 摘要 |
PURPOSE:To prevent the generation of short circuit induced by migration, extend the lifetime of a PTC device and protest the device from being cracked by using an Al-Si-made electrode which contains a specific amount of aluminum and silicon for the electrode. CONSTITUTION:Both main sides of a PTC device 22 are electrolessly plated with Ni on the whole, thereby forming Ni electrodes 23a and 23b. Then. Al-Si electrodes 24a and 24b are formed all over the Ni electrodes 23a and 23b. The Al-Si electrodes 24a and 24b contain 48 to 96wt.% of aluminum and 4 to 52wt.% of silicon. This construction makes it possible to prevent the generation of short circuit troubles induced by electrode to electrode migration and, what is more, protect the PTC device from being cracked by pulse voltage or the like and obtain highly reliable PTC devices which are excellent in performance.
|
